2N3232 (SILICON) 2N3235
CASEll~ NPN silicon power transistors designed for switching and amplifier applications, (TO-3)
...
2N3232 (SILICON) 2N3235
CASEll~
NPN silicon power
transistors designed for switching and amplifier applications, (TO-3)
MAXIMUM RATINGS
Rating
Collector-Base Voltage Collector -Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Base Current (Continuous) Power Dissipation Thermal Resistance, Junction to Case Junction Operating Temperature Range
Symbol
VCB
VCEO
VEB IC IB
Pn
°JC TJ
2N3232 2N3235
60 55 60 55 6.0 7.0 7.5 15 3.0 7.0
117
1.5
-65 to +200
Units
Vdc Vdc Vdc Adc Adc Watts °C/W
°c
120
'2
d ~
100
0:
.~
d
80
.S<
i.''s"".. 60
"a~ 40
Po.
0 20
Po.
oo
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
~
~
~ ......
...............
............
.............i'.......
~.......
25 50 75 100 125 150 175 200 TC ' Case Temperature (oC)
2-443
2N3232, 2N3235 (continued)
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted I
Characteristic
Emitter-Base Cutoff Current (VEB ~ 6.0 Vdc) (VEB ~ 7.0 Vdc)
Collector -Emitter Cutoff Current (VCE ~ 60Vdc, VBE ~ -...
