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2N3081

PNP SILICON TRANSISTOR

Description

30812N (SIUCON) PNP SILICON ANNULAR TRANSISTOR · .. designed for medium-speed switching and general-purpose amplification applications in industrial service. High Collector-Base Breakdown Voltage BVCBO = 70 Vdc (Min) @ IC = 10 /LAdc Low Collector-Emitte'r Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 150 mAdc PNPSILICON TRANSISTOR *MAXIMUM RATING...

Motorola

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