2N3010 (SILICON)
CASE 22
(TO-18)
NPN silicon low-power transistor primarily designed for high-speed, saturated switchi...
2N3010 (SILICON)
CASE 22
(TO-18)
NPN silicon low-power
transistor primarily designed for high-speed, saturated switching applications.
Collector connected to case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage*
VCEO*
Collector-Emitter Voltage
VCES
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Collector Current - Continuous
IC
Total Device Dissipation @TA = 25°C Derate above 25° C
Operating and Storage Junction Temperature Range
PD TJ , Tstg
* Applicable from 0.01 mAdc to 10 mAdc (Pulsed).
Value
6.0
11 15 4_0
50 0.30 1.71 -65 to +200
Unit
Vdc Vdc Vdc Vdc mAdc Watt mW/oC °c
FIGURE 1 - TURN-ON AND TURN·OFF TIME TEST CIRCUIT
Vee = +1.0 V
TO OSCILLOSCOPE RISE TIME = 0.4 ns 50 INPUT Z 0 50n
~Vout
0.1 /.iF taff VBB =+5.0V V.m = -4.0 V
RISE TIME < 1.0 ns
OUTPUT Z = 50n PULSE WIDTH = 200 ns
FIGURE 2 - CHARGE·STORAGE TIME TEST CIRCUIT
RTSE TIME < 1.0 ns
OUTPUT Z = 50n PULSE WIDTH"" 200 ns
+5.2 V
+3.0 v
50
~
O. I MF TO OSCILLOSCOPE RISE TIME = O. 4 ns I...
