2N3009 (SILICON)
2N3013
2N3013JAN AVAILABLE
2N3014
NPN silicon epitaxial switching transistors designed for high-speed, medium-power saturated switching applications
MAXIMUM RATINGS
CASE 27
(TO·52)
Collector Connected to Case
Rating
Collector-Emitter Voltage2N3009, 2N3013 2N3014
Collector-Emitter Voltage
Symbol VCEO *
VCES
Collector-Base Voltage
VCB
Emitter-Base Voltage 2N3009
2N3013. 2N3014
YEB
Collector Current - Continuous (lOlls pulse) Peak
Total Device DiSSiPation@TA • 25'C Der.