2N2957

2N2955 (GERMANIUM) 2N2956 2N2957 CASE12(\~ (TO.18)Z \ \ Collector connected to case PNP germanium epitaxial mesa transistors for highspeed switching applications. MAXI MUM RATI NGS (TA = 250C unless otherwise noted) Rating Collector-Base Voltage Emitter-Base Voltage 2N2955 Collector-Emitter Voltage 2N2956 2N2957 Collector Current Junction Temperature Storage Temperature Total Device Dissipation at 25°C Case Temperature (Derate 4 mW/oC above 25°C) Total Device Dissipation at 25°C Ambient Temperature (Derate 2 mW/oC above 25°C) Symbol VCS VES VCEO Ie TJ Tstg PD PD Value 40 3.5 25 20 18 100 100 -65 to +100 300 150 Unit Vdc Vdc Vdc mAdc °c °c mW mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector-Base Breakdown Voltage (Ie = 100 j.lAdc, IE= 0) Emitter-Base Breakdown Voltage (IE = 100 j.lAdc, Ie = 0) Collector-Emitter Breakdown Voltage (Ic = 10 mAde, Emitter-Base Termination - Open) Collector-Emitter Reverse Current (VCE = 25 Vdc, VEB = ...