DatasheetsPDF.com

2N3712

Part Number	2N3712
Manufacturer	Motorola
Description	NPN Transistor
Published	Nov 6, 2018
Detailed Description	2N3712 (SILICON) NPN silicon annular transistor designed for highvoltage DC to VHF amplifier applications. CASE 31 CTO-...
Datasheet	2N3712 PDF File

Overview

2N3712 (SILICON) NPN silicon annular transistor designed for highvoltage DC to VHF amplifier applications.
CASE 31 CTO-5) Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TA =25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg Value 150 150 5.
0 200 1.
0 5.
71 5.
0 28.
6 -65 to +200 Unit Vdc Vdc Vdc mAdc watt mW;oC watts mW;oC °c 2-558 2N3712 (continued) ELECTRICAL CHARACTERISTICS (T, = 25'C unless otherw;se noted) Characteristic Symbol OFF CHARACTER...

Similar Datasheet

2N3700 Silicon Planar Epitaxial NPN transistor - STMicroelectronics
2N3700 Low Power Transistor - ON Semiconductor
2N3700 LOW POWER NPN SILICON TRANSISTOR - Microsemi Corporation
2N3700 SILICON NPN TRANSISTOR - TT
2N3700 Bipolar Transistor - Multicomp
2N3700 NPN Low Power Silicon Transistor - MA-COM
2N3700 NPN TRANSISTORS - Central Semiconductor
2N3700 NPN Low Power Silicon Transistor - VPT
2N3700 Silicon Planar Epitaxial Transistors - Comset Semiconductor
2N3700 NPN SILICON PLANAR EPITAXIAL TRANSISTORS - CDIL

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)