2N3375

2N3375(SILlCON)\ 2N3553 2N3632 2N 3961 CASE 79 (10·39) 2N3553 ·'·CASE 24 (10·102) 2N3961 * Collector Connected "·CASE 36 (10·60) to Case .. Collector electrically connected to case; stud electrically 2N3375 isolated from case 2N3632 * Stud electrically Isolated from case NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guaranteed safe operating areas. MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TC =25·C Derate above 25·C PD Operating and Storage Junction Temperature Range TJ , Tstg 2N3375 2N3553 2N3632 2N3961 .. 40 .. ..65 .. ..4.0 Unit Vdc Vdc Vdc 1.5 1.0 3.0 1.0 Adc 11.6 ..66.4 7.0 23 40 131 -65 to +200 10 57.2 Watts mW;oC ·C =ELECTRICAL CHARACTERISTICS (TA 25'C unless otherwise noted) Characteristic OFF CHA...