2N3298 (SILICON)
CASE 22 (TO.IS)
NPN silicon annular transistor for power oscillator applications to 150 MHz.
Collect...
2N3298 (SILICON)
CASE 22 (TO.IS)
NPN silicon annular
transistor for power oscillator applications to 150 MHz.
Collector connected to ces. MAXIMUM RATINGS
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Total Device Dissipation (25°C Case Temperature) Derate Above 25°C
Total Device Dissipation (25°C Ambient Temperature) Derate Above 25°C 2mW/oC
Junction Temperature Storage Temperature Range
Symbol VCB VCES VEB
IC PD
PD
TJ Tstg
Value 25 25 3.0 100
1.0 6.67
0.3 2.0 +175 -65 to +175
Unit Vdc Vdc Vdc mA
Watt mWrC
Watt mW/oC
°c °c
80 MHz OSCILLATOR POWER OUTPUT TEST CIRCUIT
16K RFC
2N3298
15 pF
2.7K
12 pF
~ R' SOU BOLOMETER
l, - 4 TURNS #22 WIRE ON 'I COIL FORM
-12V o-----e----..JV'.2.0U,.,..---....
2-482
2N3298 (Continued)
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise notedl
Characteristic
Symbol
Conditions
Min Typ Max Unit
Collector-Emitter Breakdown Voltage Collector- Emitter Open Base Sustaining Volta...