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2N3925 Dataheets PDF



Part Number 2N3925
Manufacturers Motorola
Logo Motorola
Description NPN silicon annular RF power transistors
Datasheet 2N3925 Datasheet2N3925 Datasheet (PDF)

2N3924 (SILICON) thru 2N3927 NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. CASE 24 2N3925 (TO·102) Collector electrically connected to case; stud electrically isolated from case CASE 36 2N3926 2N3927 (TO·60) Stud and case electrically connected to emitter CASE 79 2N3924 (TQ.39) Collector connected to case MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol 2N3924 2N392S 2N3926 2N3927 Unit Collector-Em.

  2N3925   2N3925


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2N3924 (SILICON) thru 2N3927 NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. CASE 24 2N3925 (TO·102) Collector electrically connected to case; stud electrically isolated from case CASE 36 2N3926 2N3927 (TO·60) Stud and case electrically connected to emitter CASE 79 2N3924 (TQ.39) Collector connected to case MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol 2N3924 2N392S 2N3926 2N3927 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power DisSipation @' TC = 25° C Derate above 25° C Operating and Storage Junction Temperature Range VCEO VCB VEB IC PD TJ , Tstg 18 36 4.0 fr.5 7.0 40 18 18 36 36 4.0 4.0 1.0 1.5 10 11.6 57.1 66.3 -65 to +200 18 36 4.0 3.0 23.2 132.5 Vdc Vdc Vdc Adc Watts mW;oC °c 2-667 2N3t24 thru 2N3t27 (continued) ELECTRICAL CHARACTERISTICS (1. = 25"C unless oth81Wise noted) I Characteristic Conditions I I I I ISymbol.


2N3924 2N3925 2N3926


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