Document
2N3771 (SILICON) 2N3772 MJ3771 M.J3772
HIGH-POWER NPN SILICON TRANSISTORS
· . . designed for use in power amplifier and switching circuits applications.
• High DC Current Gain -
hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771
15 (Min) @ IC = 10 Adc - 2N3772. MJ3772
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771 1.0 Vdc (Max) @ IC = 10 Adc - MJ3772
20 AND 30 AMPERE POWER TRANSISTORS
NPN SILICON
40-60 VOLTS 150 WATTS
*MAXIMUM RATINGS
Rating
Coliector~Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current ~ Continuous
Peak Base Current - Continuous Total Device Dissipation@TC=250C
Derate above 2SoC Operating and Storage Junction
Temperature Range
Symbol
VeEO VeEX Ves VES
Ie
IS PD
TJ.Tstg
*THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Case
2N3771 MJ3771
2N3772 MJ3772
40 60 50 80 50 100 5.0 7.0 30 20 30 30 7.5 5.0
150 0.86 -65 to +200
Unit
Vdc Vdc Vdc Vdc Adc
A.