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2N3771 Dataheets PDF



Part Number 2N3771
Manufacturers Motorola
Logo Motorola
Description HIGH-POWER NPN SILICON TRANSISTORS
Datasheet 2N3771 Datasheet2N3771 Datasheet (PDF)

2N3771 (SILICON) 2N3772 MJ3771 M.J3772 HIGH-POWER NPN SILICON TRANSISTORS · . . designed for use in power amplifier and switching circuits applications. • High DC Current Gain - hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771 15 (Min) @ IC = 10 Adc - 2N3772. MJ3772 • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771 1.0 Vdc (Max) @ IC = 10 Adc - MJ3772 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60 VOLTS 150 WATTS *MAXIMUM RATINGS Rating Coliector~.

  2N3771   2N3771


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2N3771 (SILICON) 2N3772 MJ3771 M.J3772 HIGH-POWER NPN SILICON TRANSISTORS · . . designed for use in power amplifier and switching circuits applications. • High DC Current Gain - hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771 15 (Min) @ IC = 10 Adc - 2N3772. MJ3772 • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771 1.0 Vdc (Max) @ IC = 10 Adc - MJ3772 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60 VOLTS 150 WATTS *MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current ~ Continuous Peak Base Current - Continuous Total Device Dissipation@TC=250C Derate above 2SoC Operating and Storage Junction Temperature Range Symbol VeEO VeEX Ves VES Ie IS PD TJ.Tstg *THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case 2N3771 MJ3771 2N3772 MJ3772 40 60 50 80 50 100 5.0 7.0 30 20 30 30 7.5 5.0 150 0.86 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc A.


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