2N4276 (GERMANIUM)
thru
2N4283
PNP germanium power transistors designed for high current applications requiring high-g...
2N4276 (GERMANIUM)
thru
2N4283
PNP germanium power
transistors designed for high current applications requiring high-gain and low saturation voltages.
CASE 3A (TO-3 modified)
CASE 161
(TO-41)
For units with lugs attached, specify devices MP4276 etc. (TO-41 package)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
VCEO
2N4276 2N4278 2N4280 2N4282 2N4277 2N4279 2N4281 2N4283
20 30 45 60
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous *
Total Device Dissipation @ TC =' 25° C Derate above 25°C
Ope rating and Storage Junction Temperature Range
VCES VeB VEB
30 30 20
IC PD
TJ Tstg
I
45 45 25
60 170 2.0
60 60 30
-65 to +110
75 75 40
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal ReSistance. Junction to Case 8JC
I
0.5
Unit
Vdc Vdc Vdc Vdc Adc Watts W/"C °c
Unit
°C/W
FIGURE l-AVERAGE POWER-TEMPERATURE DERATING CURVE
200
i "in 160
z:
i52 120
~
is
ffi 80
~ Q
a... 40
o
20
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4...
