2N4067

2N4066 (SILICON) 2N4067 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode MOS Field-Effect Transistors designed primarily for low-power. chopper or switching applications_ DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS High Forward Transadmittance IYfsl = 2_5 mmhos (Min) @VOS= -15 Vdc (2N4067) Low Forward Gate Current IG F = 2.5 pAdc (Max) @VGS = -25 Vdc Low Drain-Source "ON" Resistance rds(on) = 250 Ohms (Max)@VGS= -15 Vdc (2N4067) *MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage R"".... Gate-SOurce Voltage Forward Gate-50urce Voltage Drain Current Total Device Dissipation@TA = 25°C Derate above 25°C Total Device Dissipation@Tc = 25°C Derate above 25°C Storage Temparature Range Operating Junction Temperature Range °lndlcatesJEDEC R8Qlotered D_. Symbol VDS VDG VGSR VGSF 10 Po Po Tstg TJ Value -30 -25 +25 -25 200 0.6 4.0 1.7 11.3 -65 to +200 -65 to +175 Unit Vde Vde Vde Vde mAde Watt mWJOC Watts mW/oC °c °c 0.335 0.305 Imii If.335 m0.24o...