2N4898 thru 2N4900 (SILICON)
~~CASE 80
CdP
(TO·66)
Medium-power PNP silicon transistors designed for driver circuits...
2N4898 thru 2N4900 (SILICON)
~~CASE 80
CdP
(TO·66)
Medium-power
PNP silicon
transistors designed for driver circuits, switching, and amplifier applications. Complement to
NPN 2N4910 thru 2N4912.
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current - Continuous *
Base Current Total Device Dissipation TC 25°C
Derate above 25° C Operating & Storage Junction
Temperature Range
Symbol 2N4898 2N4899 2N4900
VCEO
40 60
80
VCB VEB
IC*
IB
. 40 60 5.0 -1.0
.- 4 . 0 1.0
P D 25
0.143
r--T J , T stg
65 to +200
80
,
·
Unit
Vdc Vdc Vdc Adc
Adc Watts W/oC °c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case 8JC
Max
7.0
Unit
°C/W
The 1. 0 Amp maximum IC value is based upon .JEDEC current gain requirements.
The 4.0 Amp maximum value is based upon actual current-handling capability of the device (see Figure 5).
FIGURE 1- POWER·TEMPERATURE DER...
