IDH16G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technolo...
IDH16G65C6
6th Generation CoolSiC™
650V SiC
Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC
Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel
Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™
Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VRRM 650 V
QC (VR = 400 V)
21.5
nC
EC (VR = 400 V)
4.3
µJ
IF (TC ≤ 135 °C, D = 1)
16
A
VF (IF = 16 A, Tj = 25 °C) 1.25
V
PG-TO220-2
CASE
1) Cathode 1 2) Anode
2
Table 2
Package information
Type / ordering Code Package
IDH16G65C6
PG-TO220-2
Marking D1665C6
Features
B...