MHE1003N

Freescale Semiconductor Technical Data Document Number: MHE1003N Rev. 0, 7/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 220 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band. Typical Performance: VDD = 26 Vdc, IDQ = 50 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 14.0 61.5 230 2450 13.9 62.0 224 2500 11.5 61.8 214 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 2450 CW > 10:1 at all Phase Angles Pin (W) 20 (3 dB Overdrive) Test Voltage Result 28 No Device Degradation Features  Characterized with series equivalent large--signal impedance parameters and common source S--parameters  Internally pre--matched for ease of use  Qualified for operation up to 28 Vdc  Integrated ESD protection  150C case operating temperature  225C die temperature capability Target Applications  Consumer cooki...