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S34ML08G1

Cypress Semiconductor

NAND Flash Memory

S34ML08G1 8 Gb, 1-bit ECC, Flash x8 I/O, 3 V, Memory for VECmCbNedAdNeDd General Description The Cypress S34ML08...


Cypress Semiconductor

S34ML08G1

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Description
S34ML08G1 8 Gb, 1-bit ECC, Flash x8 I/O, 3 V, Memory for VECmCbNedAdNeDd General Description The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 VCC with x8 I/O interface. This document contains information for the S34ML08G1 device, which is a dual-die stack of two S34ML04G1 die. For detailed specifications, please refer to the discrete die datasheet: S34ML04G1. Distinctive Characteristics  Density – 8 Gb (4 Gb  2)  Architecture (For each 4 Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 64) bytes; 64 bytes is spare area – Block Size: 64 Pages or (128k + 4k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 8M) bytes – Device Size – 2 Planes per Device or 512 Mbyte  NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.0 compliant – Address, Data and Commands multiplexed  Supply Voltage – 3.3 V device: Vcc = 2.7 V ~ 3.6 V  Security – One Time Programmable (OTP) area – Hardware program/erase disabled during ...




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