AO4240
40V N-Channel MOSFET
General Description
The AO4240 uses trench MOSFET technology that is uniquely optimized to ...
AO4240
40V N-Channel MOSFET
General Description
The AO4240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition,switching behavior is well controlled with a "
Schottky style" soft recovery body diode.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
40V 24A < 3.3mΩ < 4.3mΩ
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
TA=25°C Power Dissipation B TA=70°C
VDS VGS
ID
IDM IAS EAS
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum 40 ±20 24 19 170 75 281 3.1 2
-55 to 150
S
Thermal Characteristics
Param...
