BDT31CF

isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF ·Complement to Type BDT32F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT BDT31F 80 VCBO Collector-Base Voltage BDT31AF 100 BDT31BF 120 V BDT31CF 140 BDT31DF 160 BDT31F 40 VCEO Collector-Emitter Voltage BDT31AF 60 BDT31BF 80 V BDT31CF 100 BDT31DF 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 1 A 22 W 150 ℃ -65~15 0 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com 55 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT31F 40 BDT31AF 60 VCEO(SUS) Collector-Emitter Sustai...