STP6N80K5

STP6N80K5 Datasheet N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS STP6N80K5 800 V Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications RDS(on) max. 1.6 Ω ID 4.5 A G(1) Switching applications Description S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1_tab technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STP6N80K5 Product summary Order code STP6N80K5 Marking 6N80K5 Package TO-220 Packing Tube DS14336 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STP6N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 4.5 A, di/dt = 100 A/μs, VDS (peak) < V(BR)DSS, VDD = 80% V(BR)D...