STB6N80K5

STB6N80K5 Datasheet N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS STB6N80K5 800 V Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications RDS(on) max. 1.6 Ω ID 4.5 A Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) technology based on an innovative proprietary vertical structure. The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STB6N80K5 Product summary Order code STB6N80K5 Marking 6N80K5 Package D²PAK Packing Tape and reel DS14335 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STB6N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 4.5 A, di/dt = 100 A/μs, VDS (peak) < V(BR)DSS, VDD = 80% V(BR...