M13D64322A

ESMT LPDDR SDRAM Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized. Differential clock inputs (CLK and CLK ) Four bank operation CAS Latency : 2, 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8, 16 & full page Special function support - DS (Drive Strength) - Deep Power Down Mode (DPD Mode) M13D64322A (2S) 512K x 32 Bit x 4 Banks Low Power DDR SDRAM All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE Data mask (DM) for write masking only VDD = 1.7V ~ 1.95V VDDQ = 1.7V ~ 1.95V Auto & Self refresh 15.6us refresh interval (64ms refresh period, 4K cycle) LVCMOS-compatible inputs Ordering Information Product ID M13D64322A -4BG2S M13D64322A -4.5BG2S M13D64322A -5BG2S Max Freq. 250MHz 222MHz 200MHz VDD Package Comments 1.8V 144 ball FBGA Pb...