Product Description
Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. Wit...
Product Description
Sirenza Microdevices’ SGA-9189 is a high performance
transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar
Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
Gmax (dB) OIP3, P1dB (dBm)
Typical Gmax, OIP3, P1dB @ 5V,180mA
25 44
23
OIP3
42
21 40
19 38
17
Gmax
15
36 34
13 32
11 30
9
P1dB
28
7 26
5 24
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
SGA-9189 SGA-9189Z
Pb RoHS Compliant & Green P...
