C451L

Technical Data : Page 1 of 3 C451 L - Power Thyristor 2000 VDRM; ********************************************************************************************************** HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) C451L 2000 2000 2100 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 65 mA (3) 400 V/sec Conducting - on state Parameter Average value of on-state current RMS value of on-state current Peak one cPSTCle surge (non repetitive) current I square t Latching current Holding cur...