Technical Data : N0910NS200
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HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . High dV/dt Capability . Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
N0910NS200
2000
2000
2100
VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage
Critical rate of vol...
N0910NS200 PDF File
