ADV
ADM250N04G
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ...
ADV
ADM250N04G
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS 40V
ID 252A
RDS(ON) (mΩ) 2.0mΩ
TO263
2
Features:
● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant
1 2
3
Description:
The ADM250N04G series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC =25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Test...
