ADV
ADM105N03E
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ...
ADV
ADM105N03E
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS 30V
ID 105A
RDS(ON) (mΩ) 4.0mΩ
TO252
2
1 2
3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴
TC=25°C
ID Continuous Drain Current
TC=25°C
PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature.
TC=25°C
Thermal Characteristics
Symbol
Parameter
RthJC RthJA
Thermal resistance junction-case max Thermal resistance junction-ambient max
Ratings 30 ±20 150
-55 to 150 105
420 105
150
Ratings 1.0 62
Unit
V °C °C A A A W
Unit °C/W °C/W
1/6
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