ADM26N60F

                        ADV     ADM26N60F  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 600V ID 20A RDS(ON) (mΩ) 135mΩ TO220F Features: ● Low gate input resistance ● High dv/dt and avalanche capabilities ●100% avalanche tested ● Low input capacitance and gate charge ● Lead-Free,RoHS Compliant 1  2  3  Description: The ADM26N60F series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous...