ADV
ADM12N03S
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 3...
ADV
ADM12N03S
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS 30V
ID 12A
RDS(ON) (mΩ) 9.0mΩ
SOP-8
S S S G
D D D D
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴
TC=25°C
ID Continuous Drain Current
TC=25°C
PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature.
TC=25°C
Thermal Characteristics
Symbol
Parameter
RthJC RthJA
Thermal resistance junction-case max Thermal resistance junction-ambient max
Ratings 30 ±20 150
-55 to 150 12
42 12
1.5
Ratings 36 85
Unit
V °C °C A A A W
Unit °C/W °C/W
1/6
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