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ADM57N10

ADV
Part Number ADM57N10
Manufacturer ADV
Description N-Channel MOSFET
Published Sep 11, 2018
Detailed Description                         ADV     ADM57N10  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 10...
Datasheet PDF File ADM57N10 PDF File

ADM57N10
ADM57N10

Overview
                        ADV     ADM57N10  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 57A RDS(ON) (mΩ) 17mΩ TO220C Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant 1  2  3  Description: The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction T...


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