PMF63UNE

PMF63UNE 20 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 2 A; Tj = 25 °C Min Typ Max Unit - - 20 V -8 - 8V [1] - - 2.2 A - 57 65 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. Nexperia PMF63UNE 20 V, N-...