MMBFJ175LT1G

MMBFJ175LT1G JFET Chopper P−Channel − Depletion Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage THERMAL CHARACTERISTICS Symbol VDG VGS(r) Value 25 −25 Unit V V Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate −Source Breakdown Voltage (VDS = 0, ID = 1.0 mA) V(BR)GSS 30 − V Gate Reverse Current (VDS = 0 V, VGS = 20 V) IGSS − 1.0 nA Gate −Source Cutoff Voltage (VDS = 15, ID = 10 nA) VGS(OFF) 3.0 6.0 V ON CHARACTERISTICS Zero Gate−Voltage Drain Current (Note 2) IDSS 7.0 60 mA (VGS = 0, VDS = 15 V) Drain Cutoff Current (VDS = 15 V, VGS = 10 V) ID(off) − 1.0 nA Drain Source On Resistance (ID = 500 mA) rDS(on) − 125 W Input Capacitance Ciss Reverse Tran...