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T2N7002BK
Silicon N-Channel MOSFETs
Description
MOSFETs Silicon N-Channel MOS T2N7002BK 1. Applications High-Speed Switching 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT23 T2N7002BK 1: Gate 2: Source 3: Drain ©2015-2017 Tos...
Toshiba
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