S-LN2308LT1G

LESHAN RADIO COMPANY, LTD. 60V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.5V ● RDS(ON) ≦200mΩ@VGS=3.3V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC Ordering Information Device LN2308LT1G S-LN2308LT1G LN2308LT3G S-LN2308LT3G Marking N08 N08 Shipping 3000/Tape& Reel 10000/Tape& Reel LN2308LT1G S-LN2308LT1G 3 1 2 SOT– 23 3 1 2 Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Limit Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS ±20 Continuous Drain Current(tJ=150℃) TA=25℃ TA=70℃ ID 2.6 1.8...