isc Silicon PNP Darlington Power Transistor
BDW74/A/B/C/D
DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gai...
isc Silicon
PNP Darlington Power
Transistor
BDW74/A/B/C/D
DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 750(Min.)@ IC= -3A ·Complement to Type BDW73/A/B/C/D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDW74
-45
VCBO
Collector-Base Voltage
BDW74A BDW74B BDW74C
-60 -80 -100
BDW74D
-120
BDW74
-45
VCEO
Collector-Emitter Voltage
BDW74A BDW74B BDW74C
-60 -80 -100
BDW74D
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
IB
Base Current-Continuous
-0.3
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
2 80
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-c Thermal Resistance, Junction to Case
isc website：www.iscsemi.com
MAX UNIT 1.56 ℃/W 62.5 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon
PNP Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW74
BDW74/A/B/C/D
MIN TYP. -45
MAX
UNIT
BDW74A
-60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDW74B IC= -30mA; IB= 0
-80
V
BDW74C
-100
BDW74D
-120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12...
