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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet
MBF15T65PEH
650V Field Stop IGBT
General Description
Features
This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
This device is for motor control.
High ruggedness for motor control
VCE(sat) positive temperature coefficient Very soft, fast recovery anti-parallel diode
Low EMI Maximum junction temperature 175°C
Applications
Inverter for motor control
TO-220F
GC E
Package outline and symbol
Maximum Ratings
Parameter Collector-emitter voltage
DC collector current, limited by Tvjmax
Pulsed collector current, tp limited by Tvjmax
Diode forward current, limited by Tvjmax
Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage
Power dissipation
Short circuit withstand time VCC ≤ 360V, VGE = 15V, Tvj = 150°C Operating Junction temperature range Storage temperature range
TC=25°C TC=100°C
TC=25.