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MBF15T65PEH Dataheets PDF



Part Number MBF15T65PEH
Manufacturers MagnaChip
Logo MagnaChip
Description 650V Field Stop IGBT
Datasheet MBF15T65PEH DatasheetMBF15T65PEH Datasheet (PDF)

MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. This device is for motor control.  High ruggedness for motor control  VCE(sat) positive temperature coefficient  Very soft, fast recovery anti-parallel diode  Low EMI  Maximum junction temperature 175°C Applications  Inve.

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. This device is for motor control.  High ruggedness for motor control  VCE(sat) positive temperature coefficient  Very soft, fast recovery anti-parallel diode  Low EMI  Maximum junction temperature 175°C Applications  Inverter for motor control TO-220F GC E Package outline and symbol Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Diode forward current, limited by Tvjmax Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage Power dissipation Short circuit withstand time VCC ≤ 360V, VGE = 15V, Tvj = 150°C Operating Junction temperature range Storage temperature range TC=25°C TC=100°C TC=25.


AT1675-17 MBF15T65PEH 3SK302


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