ST36N06

ST36N06 N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 60V/20.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 45mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST36N06 2009. V1 ST36N06 N Channel Enhancement Mode MOSFET 36.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Avalanche Current Symbol VDSS TA=25℃ TA=70℃ VGSS ID IDM IAS Typical 60 ±20 36.0 26.0 60 70 Unit V V A A A Power Dissipation TA=25℃ PD 62.5 W Ope...