ST05N20
N Channel Enhancement Mode MOSFET
2.0A
DESCRIPTION
ST05N20 is the N-Channel logic enhancement mode power field e...
ST05N20
N Channel Enhancement Mode MOSFET
2.0A
DESCRIPTION
ST05N20 is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOT-223
FEATURE
l 200V/2.0A, RDS(ON) = 800m @VGS = 10V
l Super high density cell design for extremely low RDS(ON)
l Exceptional on-resistance and maximum DC current capability
l SOT-223 package design
0520 : Product Code A : Date Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2008, Stanson Corp.
ST05N20 2014. V1
ST05N20
N Channel Enhancement Mode MOSFET
2.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source ...