STP4931

STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A DESCRIPTION STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits Where hight-side switching. PIN CONFIGURATION SOP-8 FEATURE � -20V/-8.5A, RDS(ON) = 20mΩ (Typ.) @VGS =-4.5V � -20V/-8.0A, RDS(ON) = 25mΩ @VGS = -2.5V � -20V/-5.0A, RDS(ON) = 35mΩ @VGS = -1.8V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4931 2009. V1 STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A AB...