ST3401M23RG

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 3 D G 1 S 2 1.Gate 2.Source 3.Drain -30V/-4.0A, RDS(ON) = 53mΩ (Typ.) @VGS = -10V -30V/-3.2A, RDS(ON) = 60mΩ @VGS = -4.5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3L 3 A1YA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 U...