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ST2309ES

Stanson Technology

P-Channel Enhancement Mode MOSFET


Description
ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc...



Stanson Technology

ST2309ES

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