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ST3400S23RG

Stanson Technology

N-Channel Enhancement Mode MOSFET


Description
ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su...



Stanson Technology

ST3400S23RG

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