ST2341SRG

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D GS 12 FEATURE ! -20V/-3.2A, RDS(ON) =45mΩ (Typ.) @VGS = -4.5V ! -20V/-2.0A, RDS(ON) = 53mΩ @VGS = -2.5V ! Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 4211YYTAA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA w...