ST2304SRG

DESCRIPTION ST2304SRG N Channel Enhancement Mode MOSFET 3.2A ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D GS 12 FEATURE 30V/3.2A, RDS(ON) = 44m-ohm (Typ.) @VGS = 10.0V 30V/2.0A, RDS(ON) = 60m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 04YA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.co...