Freescale Semiconductor Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 300 ...
Freescale Semiconductor Technical Data
RF Power LDMOS
Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 300 W CW
transistor is designed for industrial, scientific, medical (ISM)
applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency device is targeted to replace
industrial magnetrons and will provide longer life and ease of use.
Typical Performance: In 2400–2500 MHz reference circuit, VDD = 32 Vdc
Frequency
Pin Gps ηD Pout
(MHz)
Signal Type
(W)
(dB)
(%)
(W)
2450
CW 15.9 13.1 60.5 320
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test (W) Voltage Result
2450 (1)
CW > 5:1 at all Phase Angles
1. Measured in 2450 MHz reference circuit.
15.0 (2 dB Overdrive)
32 No Device Degradation
Features
Characterized with series equivalent large--signal impedance parameters Internally matched for ease of use Qualified for operation at 32 Vdc Integrated ESD prote...
