2SA2182

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 80 MHz (typ.) 2SA2182 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO − 230 V Collector-emitter voltage VCEO − 230 V Emitter-base voltage VEBO − 5 V Collector current Base current DC pulse IC − 1.0 A ICP − 2.0 A IB − 100 mA 1 : BASE 2 : COLLECTOR 3 : EMITTER Ta = 25°C Collector power dissipation Tc = 25°C Junction temperature Storage temperature range PC Tj Tstg 2 20 150 − 55~150 W W °C °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― JEITA SC-67 TOSHIBA 2-10U1A Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe...