INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD823
DESCRIPTION ·Collector Curren...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD823
DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.)
APPLICATIONS ·Designed for B/W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200 V
VCEO Collector-Emitter Voltage
90 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ Junction Temperature
10 A 40 W 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD823
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown V...
