VB60100C-M3

www.vishay.com VB60100C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® TO-263AB K 2 1 FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VB60100C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Diode variation 2 x 30 A 100 V 320 A 0.66 V 150 °C Common cathode MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Termina...