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PJR07N65LB

Potens semiconductor
Part Number PJR07N65LB
Manufacturer Potens semiconductor
Description N-Channel MOSFETS
Published Aug 23, 2018
Detailed Description 650V N-Channel MOSFETS PJR07N65LB General Description These N-Channel enhancement mode power field effect transistors ...
Datasheet PDF File PJR07N65LB PDF File

PJR07N65LB
PJR07N65LB

Overview
650V N-Channel MOSFETS PJR07N65LB General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO251 Pin Configuration D D GDS G S BVDSS 650V RDSON 0.
57 ID 7A Features  7A,650V, RDS(ON) =0.
57Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies ...


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