800V N-Channel MOSFETs
PJX17N80T
General Description
These N-Channel enhancement mode power field effect transistors a...
800V N-Channel MOSFETs
PJX17N80T
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
TO247 Pin Configuration
D
G
BVDSS 800V
RDSON 0.35
ID 17A
Features
800V,17A, RDS(ON) =0.35Ω@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
High efficient switched mode power supplies LED Lighting Adapter/charger
S D G
S
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current...