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PJX30N65T

Part Number	PJX30N65T
Manufacturer	Potens semiconductor
Description	N-Channel MOSFETS
Published	Aug 23, 2018
Detailed Description	Preliminary datasheet 650V N-Channel MOSFETS PJX30N65T General Description These N-Channel enhancement mode power fie...
Datasheet	PJX30N65T PDF File

Overview

Preliminary datasheet 650V N-Channel MOSFETS PJX30N65T General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO247 Pin Configuration D BVDSS 650V RDSON 0.
14 ID 30A Features  30A,650V, RDS(ON) =0.
14Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available ApplicHaigthioenffiscient switched mode power s...

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PJX30N65T N-Channel MOSFETS - Potens semiconductor

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